NTTFS4929NTAG

Specifications

Vgsth Max Id

2.2V @ 250μA

Contact Plating

Tin

Pin Sayısı

8

JESD-609 Kodu

e3

Terminal Formu

FLAT

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

2 Weeks

Case Connection

DRAIN

Power Dissipation

2.11W

Drain To Source Breakdown Voltage

30V

Number Of Elements

1

Fet Type

N-Channel

Jesd30 Code

S-PDSO-F5

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

34A

Pin Sayısı

8

Vgs Max

±20V

Parça Durumu

Active

Element Configuration

Single

Kılıf / Paket

8-PowerWDFN

Pulsed Drain Currentmax Idm

69A

Gate Charge Qg Max Vgs

8.8nC @ 4.5V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Gate To Source Voltage Vgs

20V

Power Dissipation Max

810mW Ta 22.3W Tc

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

920pF @ 15V

Rds On Max Id Vgs

11m Ω @ 10A, 10V

Terminal Sayısı

5

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

6.6A Ta 34A Tc

Rise Time

24ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99