NTTFS4821NTAG

Specifications

Power Dissipation

4.1W

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

24nC @ 11.5V

Genişlik

3.15mm

Kılıf / Paket

8-PowerWDFN

Continuous Drain Current Id

18.6A

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Jesd30 Code

S-PDSO-N5

Avalanche Energy Rating Eas

55 mJ

Turn On Delay Time

12 ns

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Rise Time

22ns

Current Continuous Drain Id25

7.5A Ta 57A Tc

Input Capacitance Ciss Max Vds

1755pF @ 12V

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Fall Time Typ

4.5 ns

Drain To Source Breakdown Voltage

30V

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

JESD-609 Kodu

e3

Pin Sayısı

8

Vgsth Max Id

2.5V @ 250μA

Configuration

SINGLE WITH BUILT-IN DIODE

Uzunluk

3.15mm

Parça Durumu

Active

Vgs Max

±20V

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Yayın Yılı

2009

Terminal Sayısı

5

Rds On Max Id Vgs

7m Ω @ 20A, 10V