NTR5103NT1G

Specifications

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

0.81nC @ 5V

Terminal Formu

GULL WING

Power Dissipation Max

300mW Ta

Gate To Source Voltage Vgs

30V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

0.26A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

300mW

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

2.5 Ω @ 240mA, 10V

Current Continuous Drain Id25

260mA Ta

Number Of Channels

1

Transistor Element Material

SILICON

Max Junction Temperature Tj

150°C

Input Capacitance Ciss Max Vds

40pF @ 25V

Fall Time Typ

3.6 ns

Number Of Elements

1

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Yükseklik

1.11mm

Turn Off Delay Time

4.8 ns

Vgsth Max Id

2.6V @ 250μA

Drain To Source Breakdown Voltage

60V

Vgs Max

±30V

Yayın Yılı

2014

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

260mA

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Rise Time

1.2ns

Transistor Application

SWITCHING

Turn On Delay Time

1.7 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Kurşunsuz

Lead Free

ECCN Kodu

EAR99