NTP6413ANG

Specifications

Gate Charge Qg Max Vgs

51nC @ 10V

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-220-3

Power Dissipation

136W

Direnç

28MOhm

Current Continuous Drain Id25

42A Tc

Parça Durumu

Obsolete

Yükseklik

15.75mm

Turn Off Delay Time

52 ns

Fall Time Typ

71 ns

Avalanche Energy Rating Eas

200 mJ

Ambalaj

Tube

Pin Sayısı

3

Yayın Yılı

2009

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

100V

Rise Time

84ns

Genişlik

4.82mm

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 day ago)

Threshold Voltage

4V

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Nominal Vgs

4 V

Jedec95 Code

TO-220AB

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Element Configuration

Single

RoHS Durumu

RoHS Compliant

Power Dissipation Max

136W Tc

Yüzey Montaj

NO

Rds On Max Id Vgs

28m Ω @ 42A, 10V

Montaj Tipi

Through Hole

Uzunluk

10.28mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

4.535924g

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

1800pF @ 25V

Transistor Element Material

SILICON