NTP5863NG

Specifications

Input Capacitance Ciss Max Vds

3200pF @ 25V

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 250μA

Radyasyon Dayanımı

No

Parça Durumu

Obsolete

Turn Off Delay Time

25 ns

Number Of Elements

1

Fall Time Typ

9 ns

Avalanche Energy Rating Eas

157 mJ

Rds On Max Id Vgs

7.8m Ω @ 20A, 10V

Montaj Tipi

Through Hole

Power Dissipation

150W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

97A Tc

Case Connection

DRAIN

Gate To Source Voltage Vgs

20V

Power Dissipation Max

150W Tc

Yüzey Montaj

NO

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

55nC @ 10V

Element Configuration

Single

RoHS Durumu

RoHS Compliant

Pin Sayısı

3

Jedec95 Code

TO-220AB

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Drainsource On Resistancemax

0.0078Ohm

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Turn On Delay Time

10 ns

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tube

Pin Sayısı

3

Continuous Drain Current Id

97A

Vgs Max

±20V