Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drive Voltage Max Rds On Min Rds On
- 10V
- Yayın Yılı
- 2012
- Vgs Max
- ±20V
- Drain To Source Breakdown Voltage
- 60V
- Continuous Drain Current Id
- 220A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Pin Sayısı
- 3
- Ambalaj
- Tube
- Rise Time
- 117ns
- Pulsed Drain Currentmax Idm
- 660A
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Turn On Delay Time
- 27 ns
- JESD-609 Kodu
- e3
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Jedec95 Code
- TO-220AB
- Pin Sayısı
- 3
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 180nC @ 10V
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Yüzey Montaj
- NO
- Power Dissipation Max
- 283W Tc
- Gate To Source Voltage Vgs
- 20V
- Kılıf / Paket
- TO-220-3
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Power Dissipation
- 283W
- Rds On Max Id Vgs
- 3m Ω @ 75A, 10V
- Case Connection
- DRAIN
- Current Continuous Drain Id25
- 220A Tc
- Input Capacitance Ciss Max Vds
- 10760pF @ 25V
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Fall Time Typ
- 150 ns
- Radyasyon Dayanımı
- No
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