NTMS5P02R2G

Specifications

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Kurşunsuz Kodu

yes

Gate To Source Voltage Vgs

10V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

35nC @ 4.5V

Fall Time Typ

55 ns

Turn Off Delay Time

70 ns

Fabrika Tedarik Süresi

38 Weeks

Yükseklik

1.5mm

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Current Continuous Drain Id25

3.95A Ta

Power Dissipation

2.5W

Direnç

26MOhm

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Genişlik

4mm

Akım Değeri

-5.4A

Rise Time

25ns

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Yayın Yılı

2006

Drain To Source Breakdown Voltage

-20V

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Fet Type

P-Channel

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Nominal Vgs

-900 mV

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

8

Drain Currentmax Abs Id

3.95A

Yüzey Montaj

YES

Power Dissipation Max

790mW Ta

Element Configuration

Single

Drain To Source Voltage Vdss

20V

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

40

Number Of Elements

1

Vgsth Max Id

1.25V @ 250μA