Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- Vgsth Max Id
- 2.5V @ 250μA
- Input Capacitance Ciss Max Vds
- 1376pF @ 25V
- Transistor Element Material
- SILICON
- Uzunluk
- 5mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 9m Ω @ 12A, 10V
- Drain Currentmax Abs Id
- 9.4A
- Yüzey Montaj
- YES
- Power Dissipation Max
- 890mW Ta
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Contact Plating
- Tin
- Pin Sayısı
- 8
- Drainsource On Resistancemax
- 0.009Ohm
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Terminal Pozisyonu
- DUAL
- Turn On Delay Time
- 9.4 ns
- Vgs Max
- ±20V
- Continuous Drain Current Id
- 11.6A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fall Time Typ
- 15.6 ns
- Parça Durumu
- Active
- Yükseklik
- 1.5mm
- Fabrika Tedarik Süresi
- 6 Weeks
- Turn Off Delay Time
- 32 ns
- Current Continuous Drain Id25
- 7.8A Ta
- Power Dissipation
- 1.3W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Kurşunsuz Kodu
- yes
- Terminal Formu
- GULL WING
- Gate To Source Voltage Vgs
- 20V
- Gate Charge Qg Max Vgs
- 15nC @ 4.5V
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Terminal Sayısı
- 8
- JESD-609 Kodu
- e3
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