NTMS4706NR2G

Specifications

Tepe Reflow Süresi (maks. sn)

40

Gate Charge Qg Max Vgs

15nC @ 4.5V

RoHS Durumu

RoHS Compliant

Power Dissipation Max

830mW Ta

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

yes

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

12m Ω @ 10.3A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Power Dissipation

1.5W

Current Continuous Drain Id25

6.4A Ta

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

260

Input Capacitance Ciss Max Vds

950pF @ 24V

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Turn Off Delay Time

24 ns

Vgsth Max Id

2.5V @ 250μA

Number Of Elements

1

Fall Time Typ

4 ns

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yayın Yılı

2005

Vgs Max

±20V

Drain To Source Breakdown Voltage

30V

Continuous Drain Current Id

6.4A

Transistor Application

SWITCHING

Montaj

Surface Mount

Rise Time

4ns

Akım Değeri

8.6A

Lifecycle Status

OBSOLETE (Last Updated: 1 day ago)

Voltage Rated Dc

30V

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE