NTMS4177PR2G

Specifications

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

yes

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

55nC @ 10V

Tepe Reflow Sıcaklığı (°C)

260

Turn Off Delay Time

64 ns

Fabrika Tedarik Süresi

31 Weeks

Yükseklik

1.5mm

Parça Durumu

Active

Fall Time Typ

36 ns

Power Dissipation

2.5W

Current Continuous Drain Id25

6.6A Ta

Genişlik

4mm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

JESD-609 Kodu

e3

Threshold Voltage

-2.5V

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yayın Yılı

2000

Drain To Source Breakdown Voltage

-30V

Transistor Application

SWITCHING

Rise Time

13ns

Operating Mode

ENHANCEMENT MODE

Fet Type

P-Channel

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

8

Power Dissipation Max

840mW Ta

Yüzey Montaj

YES

Drain Currentmax Abs Id

6.6A

Element Configuration

Single

Drain To Source Voltage Vdss

30V

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

3100pF @ 24V

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Vgsth Max Id

2.5V @ 250μA

Number Of Elements

1

Rds On Max Id Vgs

12m Ω @ 11.4A, 10V