NTMS3P03R2G

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

45 ns

Parça Durumu

Obsolete

Turn Off Delay Time

45 ns

Power Dissipation

2W

Current Continuous Drain Id25

2.34A Ta

REACH Uyumluluk Kodu

unknown

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

25nC @ 10V

Feedback Capmax Crss

135 pF

Fet Type

P-Channel

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

8

Additional Feature

AVALANCHE RATED

Nominal Vgs

-1.7 V

Lifecycle Status

OBSOLETE (Last Updated: 1 day ago)

Akım Değeri

-3.05A

JESD-609 Kodu

e3

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Breakdown Voltage

-30V

Yayın Yılı

2006

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Rise Time

16ns

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

750pF @ 24V

Transistor Element Material

SILICON

Number Of Elements

1

Vgsth Max Id

2.5V @ 250μA

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

85m Ω @ 3.05A, 10V

Qualification Status

Not Qualified

Power Dissipation Max

730mW Ta

Drain Currentmax Abs Id

2.34A