NTMS10P02R2G

Specifications

Current Continuous Drain Id25

8.8A Ta

Power Dissipation

2.5W

Direnç

14MOhm

Yükseklik

1.5mm

Fabrika Tedarik Süresi

21 Weeks

Turn Off Delay Time

110 ns

Parça Durumu

Active

Fall Time Typ

110 ns

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

70nC @ 4.5V

Kurşunsuz Kodu

yes

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate To Source Voltage Vgs

12V

Terminal Formu

GULL WING

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Fet Type

P-Channel

Transistor Application

SWITCHING

Rise Time

40ns

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

-20V

Yayın Yılı

2006

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

JESD-609 Kodu

e3

Threshold Voltage

-880mV

Genişlik

4mm

Akım Değeri

-10A

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Rds On Max Id Vgs

14m Ω @ 10A, 4.5V

Montaj Tipi

Surface Mount

Uzunluk

5mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

1.2V @ 250μA

Radyasyon Dayanımı

No

Number Of Elements

1

Input Capacitance Ciss Max Vds

3640pF @ 16V

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant