NTMFS5C604NLT1G

Specifications

Rds On Max Id Vgs

1.2m Ω @ 50A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Uzunluk

5.9mm

Current Continuous Drain Id25

38A Ta

Gate Charge Qg Max Vgs

120nC @ 10V

Element Configuration

Single

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Number Of Channels

1

Yükseklik

1.1mm

Case Connection

DRAIN

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

776 mJ

Turn On Delay Time

32.9 ns

Drain To Source Breakdown Voltage

60V

Number Of Elements

1

Power Dissipation Max

3.9W Ta 200W Tc

Max Junction Temperature Tj

175°C

Montaj Tipi

Surface Mount

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

3.9W

Rise Time

79.1ns

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

260

Fabrika Tedarik Süresi

18 Weeks

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Fall Time Typ

81.3 ns

Genişlik

4.9mm

Terminal Formu

FLAT

Pulsed Drain Currentmax Idm

900A

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

Vgsth Max Id

2V @ 250μA

Fet Type

N-Channel