NTMFS4C302NT1G

Specifications

Power Dissipation Max

3.13W Ta 96W Tc

Number Of Elements

1

Terminal Pozisyonu

DUAL

Fet Type

N-Channel

Avalanche Energy Rating Eas

186 mJ

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Kılıf / Paket

8-PowerTDFN, 5 Leads

Input Capacitance Ciss Max Vds

5780pF @ 15V

Parça Durumu

Active

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Fabrika Tedarik Süresi

16 Weeks

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Ds Breakdown Voltagemin

30V

Terminal Sayısı

5

Jesd30 Code

R-PDSO-F5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

1.15m Ω @ 30A, 10V

Current Continuous Drain Id25

41A Ta 230A Tc

Gate Charge Qg Max Vgs

82nC @ 10V

Pulsed Drain Currentmax Idm

900A

RoHS Durumu

RoHS Compliant

Tepe Reflow Süresi (maks. sn)

30

Terminal Formu

FLAT

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.2V @ 250μA

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0017Ohm

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

JESD-609 Kodu

e3