NTMFS4C10NT1G

Specifications

Uzunluk

6.1mm

Current Continuous Drain Id25

8.2A Ta

Gate Charge Qg Max Vgs

9.7nC @ 4.5V

Rds On Max Id Vgs

6.95m Ω @ 30A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yükseklik

1.05mm

Transistor Application

SWITCHING

Yüzey Montaj

YES

Element Configuration

Single

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Number Of Channels

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Case Connection

DRAIN

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Turn On Delay Time

9 ns

Number Of Elements

1

Power Dissipation Max

750mW Ta 23.6W Tc

Kılıf / Paket

8-PowerTDFN

Montaj Tipi

Surface Mount

Pin Sayısı

5

Rise Time

34ns

Ds Breakdown Voltagemin

30V

Terminal Sayısı

5

REACH Uyumluluk Kodu

not_compliant

Fabrika Tedarik Süresi

16 Weeks

Ambalaj

Tape & Reel (TR)

Fall Time Typ

7 ns

Genişlik

5.1mm

Vgsth Max Id

2.2V @ 250μA

Terminal Formu

FLAT

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

14 ns

Fet Type

N-Channel

Terminal Pozisyonu

DUAL

Reach Svhc

No SVHC