NTMFS4C05NT1G

Specifications

Kılıf / Paket

8-PowerTDFN

Montaj Tipi

Surface Mount

Number Of Elements

1

Power Dissipation Max

770mW Ta 33W Tc

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

11 ns

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Application

SWITCHING

Yükseklik

1.05mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Channels

1

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Element Configuration

Single

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

14nC @ 4.5V

Current Continuous Drain Id25

11.9A Ta

Uzunluk

6.1mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

3.4m Ω @ 30A, 10V

Input Capacitance Ciss Max Vds

1972pF @ 15V

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

78A

Parça Durumu

Active

Threshold Voltage

2.2V

Pin Sayısı

5

Yayın Yılı

2014

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL

Turn Off Delay Time

21 ns

Fet Type

N-Channel

Vgsth Max Id

2.2V @ 250μA