NTMFS4C029NT1G

Specifications

Pulsed Drain Currentmax Idm

132A

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.2V @ 250μA

Drainsource On Resistancemax

0.0058Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

16 Weeks

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

REACH Uyumluluk Kodu

not_compliant

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Ds Breakdown Voltagemin

30V

Terminal Sayısı

5

Jesd30 Code

R-PDSO-F5

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

5.88m Ω @ 30A, 10V

Current Continuous Drain Id25

15A Ta 46A Tc

Gate Charge Qg Max Vgs

18.6nC @ 10V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Kılıf / Paket

8-PowerTDFN, 5 Leads

Input Capacitance Ciss Max Vds

987pF @ 15V

Parça Durumu

Active

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.49W Ta 23.6W Tc

Number Of Elements

1

Drain Currentmax Abs Id

8.2A

Terminal Pozisyonu

DUAL