NTMFS4899NFT1G

Specifications

Turn On Delay Time

12.6 ns

Avalanche Energy Rating Eas

84 mJ

Drain To Source Breakdown Voltage

30V

Power Dissipation Max

920mW Ta 48W Tc

Number Of Elements

1

Montaj Tipi

Surface Mount

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

2.7W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

5m Ω @ 30A, 10V

Current Continuous Drain Id25

10.4A Ta 75A Tc

Gate Charge Qg Max Vgs

25nC @ 10V

Direnç

5MOhm

Uzunluk

5.1mm

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

YES

Vgs Max

±20V

Yükseklik

1.1mm

Transistor Application

SWITCHING

Case Connection

DRAIN

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Fet Type

N-Channel

Turn Off Delay Time

20 ns

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL

Pin Sayısı

5

Yayın Yılı

2010

Parça Durumu

Active

Continuous Drain Current Id

75A

Kurşunsuz Kodu

yes

Threshold Voltage

1.5V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)