NTMFS4897NFT1G

Specifications

Montaj Tipi

Surface Mount

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

96.2W

Turn On Delay Time

26 ns

Drain To Source Breakdown Voltage

30V

Power Dissipation Max

950mW Ta 96.2W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

2m Ω @ 22A, 10V

Gate Charge Qg Max Vgs

83.6nC @ 10V

Current Continuous Drain Id25

17A Ta 171A Tc

Uzunluk

5.1mm

Direnç

2MOhm

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Yüzey Montaj

YES

Element Configuration

Single

Transistor Application

SWITCHING

Yükseklik

1.1mm

Kurşunsuz Kodu

yes

Parça Durumu

Active

Continuous Drain Current Id

17A

Threshold Voltage

2V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Kurşunsuz

Lead Free

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

5660pF @ 15V

Fet Type

N-Channel

Turn Off Delay Time

36 ns

Pin Sayısı

5

Yayın Yılı

2007

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL