NTMFS4841NHT1G

Specifications

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

5.7W

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

12.1 ns

Number Of Elements

1

Power Dissipation Max

870mW Ta 41.7W Tc

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Contact Plating

Tin

Gate Charge Qg Max Vgs

33nC @ 11.5V

Current Continuous Drain Id25

8.6A Ta 59A Tc

Uzunluk

5.1mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

7m Ω @ 30A, 10V

Jesd30 Code

R-PDSO-F6

Transistor Application

SWITCHING

Yükseklik

1.1mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

13.5A

Parça Durumu

Active

Input Capacitance Ciss Max Vds

2113pF @ 12V

Kurşunsuz

Lead Free

Turn Off Delay Time

21.9 ns

Fet Type

N-Channel

Pin Sayısı

8

Yayın Yılı

2009

Drain Currentmax Abs Id

59A

Terminal Pozisyonu

DUAL

Genişlik

6.1mm

Fall Time Typ

2.9 ns

Ambalaj

Tape & Reel (TR)