NTMFS4835NT1G

Specifications

Montaj Tipi

Surface Mount

Power Dissipation

62.5W

Kılıf / Paket

8-PowerTDFN, 5 Leads

Turn On Delay Time

16 ns

Avalanche Energy Rating Eas

392 mJ

Drain To Source Breakdown Voltage

30V

Number Of Elements

1

Power Dissipation Max

890mW Ta 62.5W Tc

JESD-609 Kodu

e3

Case Connection

DRAIN

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Rds On Max Id Vgs

3.5m Ω @ 30A, 10V

Contact Plating

Tin

Gate Charge Qg Max Vgs

52nC @ 11.5V

Current Continuous Drain Id25

13A Ta 130A Tc

Uzunluk

5.1mm

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Yüzey Montaj

YES

Element Configuration

Single

Transistor Application

SWITCHING

Yükseklik

1.1mm

Kurşunsuz Kodu

yes

Continuous Drain Current Id

20A

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

3100pF @ 12V

Fet Type

N-Channel

Turn Off Delay Time

22 ns

Yayın Yılı

2006

Pin Sayısı

5

Terminal Pozisyonu

DUAL

Genişlik

6.1mm

Fall Time Typ

13 ns