NTMFS4833NT3G

Specifications

Yüzey Montaj

YES

Element Configuration

Single

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

1.1mm

Transistor Application

SWITCHING

Rds On Max Id Vgs

2m Ω @ 30A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Nominal Vgs

1.5 V

Uzunluk

5.1mm

Current Continuous Drain Id25

16A Ta 156A Tc

Gate Charge Qg Max Vgs

88nC @ 11.5V

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Case Connection

DRAIN

JESD-609 Kodu

e3

Power Dissipation Max

910mW Ta 125W Tc

Number Of Elements

1

Turn On Delay Time

25 ns

Drain To Source Breakdown Voltage

30V

Montaj Tipi

Surface Mount

Power Dissipation

2.35W

Kılıf / Paket

8-PowerTDFN, 5 Leads

Tepe Reflow Sıcaklığı (°C)

260

Fabrika Tedarik Süresi

16 Weeks

Terminal Sayısı

5

Rise Time

34ns

Radyasyon Dayanımı

No

Pin Sayısı

5

Terminal Formu

FLAT

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

288A

Tepe Reflow Süresi (maks. sn)

40

Drainsource On Resistancemax

0.003Ohm

Vgsth Max Id

2.5V @ 250μA

Ambalaj

Tape & Reel (TR)

Fall Time Typ

17 ns

Genişlik

6.1mm