NTMFS4833NT1G

Specifications

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Element Configuration

Single

Yüzey Montaj

YES

Transistor Application

SWITCHING

Yükseklik

1mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

2m Ω @ 30A, 10V

Gate Charge Qg Max Vgs

88nC @ 11.5V

Current Continuous Drain Id25

16A Ta 156A Tc

Direnç

2MOhm

Uzunluk

4.9mm

Montaj Tipi

Surface Mount

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

2.35W

Power Dissipation Max

910mW Ta 125W Tc

Number Of Elements

1

Turn On Delay Time

25 ns

Drain To Source Breakdown Voltage

30V

Tepe Reflow Süresi (maks. sn)

40

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

288A

Terminal Formu

FLAT

Vgsth Max Id

2.5V @ 250μA

Genişlik

5.8mm

Fall Time Typ

17 ns

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

5

Rise Time

34ns

Pin Sayısı

6

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free