NTMFS4823NT1G

Specifications

JESD-609 Kodu

e3

Case Connection

DRAIN

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

16V

Transistor Element Material

SILICON

Uzunluk

5.1mm

Direnç

10.6MOhm

Gate Charge Qg Max Vgs

13nC @ 11.5V

Current Continuous Drain Id25

6.9A Ta 30A Tc

Rds On Max Id Vgs

10.6m Ω @ 30A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Transistor Application

SWITCHING

Yükseklik

1.1mm

Vgs Max

±20V

Yüzey Montaj

YES

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN, 5 Leads

Power Dissipation

5.43W

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

10.8 ns

Number Of Elements

1

Power Dissipation Max

860mW Ta 32.5W Tc

Fall Time Typ

3.8 ns

Ambalaj

Tape & Reel (TR)

Genişlik

6.1mm

Vgsth Max Id

2.5V @ 250μA

Terminal Formu

FLAT

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

5

Radyasyon Dayanımı

No

Rise Time

29ns

Terminal Sayısı

5

Fabrika Tedarik Süresi

2 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Threshold Voltage

1.9V

Kurşunsuz Kodu

yes