NTMFS4108NT1G

Specifications

JESD-609 Kodu

e3

Case Connection

DRAIN

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

12V

Configuration

SINGLE WITH BUILT-IN DIODE

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Rds On Max Id Vgs

2.2m Ω @ 21A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate Charge Qg Max Vgs

54nC @ 4.5V

Current Continuous Drain Id25

13.5A Ta

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Power Dissipation

2.4W

Kılıf / Paket

8-PowerTDFN, 5 Leads

Drain To Source Breakdown Voltage

30V

Power Dissipation Max

1.1W Ta 96.2W Tc

Number Of Elements

1

Fall Time Typ

140 ns

Ambalaj

Tape & Reel (TR)

Terminal Formu

FLAT

Tepe Reflow Süresi (maks. sn)

40

RoHS Durumu

RoHS Compliant

Pulsed Drain Currentmax Idm

203A

Akım Değeri

22A

Drainsource On Resistancemax

0.0022Ohm

Vgsth Max Id

2.5V @ 250μA

Montaj

Surface Mount

Rise Time

60ns

Pin Sayısı

5

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

5

Kurşunsuz Kodu

yes

Parça Durumu

Obsolete

Continuous Drain Current Id

35A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

LAST SHIPMENTS (Last Updated: 4 days ago)