NTLJF4156NT1G

Specifications

Turn On Delay Time

4.8 ns

Drain To Source Breakdown Voltage

30V

Power Dissipation Max

710mW Ta

Number Of Elements

1

Montaj Tipi

Surface Mount

Power Dissipation

1.5W

Kılıf / Paket

6-WDFN Exposed Pad

Rds On Max Id Vgs

70m Ω @ 2A, 4.5V

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Uzunluk

2mm

Gate Charge Qg Max Vgs

6.5nC @ 4.5V

Contact Plating

Tin

Current Continuous Drain Id25

2.5A Tj

Vgs Max

±8V

Element Configuration

Single

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Yükseklik

750μm

JESD-609 Kodu

e3

Case Connection

DRAIN

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

8V

Transistor Element Material

SILICON

Voltage Rated Dc

30V

Fet Type

N-Channel

Turn Off Delay Time

14.2 ns

Pin Sayısı

6

Yayın Yılı

2006

Drain Currentmax Abs Id

2.5A

Terminal Pozisyonu

DUAL

Kurşunsuz Kodu

yes

Continuous Drain Current Id

3.7A

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 18 hours ago)

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

427pF @ 15V

Rise Time

9.2ns