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Specifications
- Power Dissipation Max
- 310mW Ta
- Continuous Drain Current Id
- 285mA
- Akım Değeri
- 225mA
- Current Continuous Drain Id25
- 210mA Ta
- Turn On Delay Time
- 13 ns
- Threshold Voltage
- 400mV
- Tepe Reflow Süresi (maks. sn)
- 40
- Vgsth Max Id
- 1.3V @ 250μA
- Voltage Rated Dc
- 20V
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Direnç
- 3.4Ohm
- Transistor Element Material
- SILICON
- Yükseklik
- 550μm
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2005
- Rise Time
- 15ns
- Kılıf / Paket
- SOT-723
- Terminal Formu
- FLAT
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Contact Plating
- Tin
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 20V
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Yüzey Montaj
- YES
- Terminal Pozisyonu
- DUAL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Ambalaj
- Tape & Reel (TR)
- Gate To Source Voltage Vgs
- 10V
- Rds On Max Id Vgs
- 3.4 Ω @ 10mA, 4.5V
- Drain Currentmax Abs Id
- 0.255A
- Kurşunsuz
- Lead Free
- Power Dissipation
- 440mW
- Vgs Max
- ±10V
- Drive Voltage Max Rds On Min Rds On
- 1.65V 4.5V
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