NTHS5441T1G

Specifications

Transistor Application

SWITCHING

Terminal Formu

C BEND

Rise Time

22ns

Kılıf / Paket

8-SMD, Flat Lead

Yayın Yılı

2005

Yükseklik

1.1mm

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

Element Configuration

Single

Drain To Source Breakdown Voltage

-20V

Terminal Sayısı

8

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

1.2V @ 250μA

Tepe Reflow Süresi (maks. sn)

40

Akım Değeri

-3.9A

Current Continuous Drain Id25

3.9A Ta

Turn On Delay Time

14 ns

Continuous Drain Current Id

5.3A

Power Dissipation Max

1.3W Ta

Weight

4.535924g

Montaj

Surface Mount

Transistor Element Material

SILICON

Additional Feature

LOGIC LEVEL COMPATIBLE

Gate Charge Qg Max Vgs

22nC @ 4.5V

Pin Sayısı

8

Pin Sayısı

8

Voltage Rated Dc

-20V

Drainsource On Resistancemax

0.06Ohm

ECCN Kodu

EAR99

Genişlik

1.7mm

Number Of Elements

1

Fall Time Typ

22 ns

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

710pF @ 5V

Radyasyon Dayanımı

No

Fet Type

P-Channel

Turn Off Delay Time

42 ns

Reach Svhc

No SVHC