NTHS4166NT1G

Specifications

JESD-609 Kodu

e3

Terminal Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Drain To Source Breakdown Voltage

30V

Kılıf / Paket

8-SMD, Flat Lead

Rise Time

11ns

Transistor Application

SWITCHING

Terminal Formu

C BEND

Yayın Yılı

2007

Kurşunsuz Kodu

yes

Yükseklik

1.1mm

Transistor Element Material

SILICON

Montaj

Surface Mount

Drainsource On Resistancemax

0.022Ohm

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

8

Gate Charge Qg Max Vgs

18nC @ 10V

Pin Sayısı

8

Current Continuous Drain Id25

4.9A Ta

Turn On Delay Time

12 ns

Vgsth Max Id

2.3V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Continuous Drain Current Id

6.6A

Power Dissipation Max

800mW Ta

Montaj Tipi

Surface Mount

Turn Off Delay Time

20 ns

Uzunluk

3.1mm

Genişlik

1.7mm

Fall Time Typ

11 ns

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Fet Type

N-Channel

Qualification Status

Not Qualified

Input Capacitance Ciss Max Vds

900pF @ 15V

Kurşunsuz

Lead Free

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V