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NTHS4101PT1G

ON Semiconductor

NTHS4101PT1G

Single MOSFETs Transistors

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Specifications

Continuous Drain Current Id
-4.8A
Power Dissipation Max
1.3W Ta
Akım Değeri
-4.8A
Current Continuous Drain Id25
4.8A Tj
Turn On Delay Time
8 ns
Vgsth Max Id
1.5V @ 250μA
Threshold Voltage
-1.5V
Tepe Reflow Süresi (maks. sn)
40
Voltage Rated Dc
-20V
Terminal Kaplaması
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Pin Sayısı
8
Direnç
21MOhm
Gate Charge Qg Max Vgs
35nC @ 4.5V
Pin Sayısı
8
Transistor Element Material
SILICON
Montaj
Surface Mount
Yayın Yılı
2006
Yükseklik
1.1mm
Kurşunsuz Kodu
yes
Rise Time
28ns
Kılıf / Paket
8-SMD, Flat Lead
Transistor Application
SWITCHING
Terminal Formu
C BEND
Terminal Sayısı
8
Tepe Reflow Sıcaklığı (°C)
260
Operating Mode
ENHANCEMENT MODE
Element Configuration
Single
Drain To Source Breakdown Voltage
-20V
JESD-609 Kodu
e3
Terminal Pozisyonu
DUAL
Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Tape & Reel (TR)
Gate To Source Voltage Vgs
8V
Rds On Max Id Vgs
34m Ω @ 4.8A, 4.5V
Kurşunsuz
Lead Free
Nominal Vgs
-1.5 V
Vgs Max
±8V
Drive Voltage Max Rds On Min Rds On
1.8V 4.5V

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