NTGS3433T1G

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

2.35A Ta

Power Dissipation Max

500mW Ta

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Yayın Yılı

2006

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Turn Off Delay Time

110 ns

Input Capacitance Ciss Max Vds

550pF @ 5V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fet Type

P-Channel

Akım Değeri

-3.3A

ECCN Kodu

EAR99

Continuous Drain Current Id

3.3A

Drain Currentmax Abs Id

2.35A

Fall Time Typ

100 ns

Gate To Source Voltage Vgs

8V

Drainsource On Resistancemax

0.075Ohm

Rise Time

20ns

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Vgsth Max Id

1.5V @ 250μA

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Voltage Rated Dc

-12V

Terminal Pozisyonu

DUAL

Contact Plating

Tin

Terminal Sayısı

6

Element Configuration

Single

Number Of Elements

1

Turn On Delay Time

20 ns

Fabrika Tedarik Süresi

2 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

15nC @ 4.5V

Rds On Max Id Vgs

75m Ω @ 3.3A, 4.5V