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NTF6P02T3G

ON Semiconductor

NTF6P02T3G

Single MOSFETs Transistors

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Specifications

Terminal Sayısı
4
Number Of Elements
1
Element Configuration
Single
Turn On Delay Time
7 ns
Fabrika Tedarik Süresi
14 Weeks
Reach Svhc
No SVHC
Montaj Tipi
Surface Mount
Gate Charge Qg Max Vgs
20nC @ 4.5V
Rise Time
25ns
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Vgsth Max Id
1V @ 250μA
Uzunluk
6.7mm
Drive Voltage Max Rds On Min Rds On
2.5V 4.5V
Voltage Rated Dc
-20V
Terminal Pozisyonu
DUAL
Kurşunsuz Kodu
yes
Dual Supply Voltage
-20V
Pin Sayısı
4
Tepe Reflow Sıcaklığı (°C)
260
Kılıf / Paket
TO-261-4, TO-261AA
Pin Sayısı
4
Kurşunsuz
Lead Free
Drain To Source Voltage Vdss
20V
Additional Feature
AVALANCHE RATED
Drain To Source Breakdown Voltage
-20V
Rds On Max Id Vgs
50m Ω @ 6A, 4.5V
Tepe Reflow Süresi (maks. sn)
40
Power Dissipation
8.3W
Vgs Max
±8V
Terminal Formu
GULL WING
Pulsed Drain Currentmax Idm
35A
Operating Mode
ENHANCEMENT MODE
Transistor Application
SWITCHING
Yayın Yılı
2007
Transistor Element Material
SILICON
Threshold Voltage
-700mV
Genişlik
3.7mm
Ambalaj
Tape & Reel (TR)
Radyasyon Dayanımı
No
Terminal Kaplaması
Tin (Sn)

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