NTD5803NT4G

Specifications

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

20V

Pin Sayısı

4

Fall Time Typ

6.6 ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

4

Continuous Drain Current Id

76A

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Case Connection

DRAIN

Vgs Max

±20V

Power Dissipation

83W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Rds On Max Id Vgs

7.2m Ω @ 50A, 10V

Drain To Source Breakdown Voltage

40V

JESD-609 Kodu

e3

Turn Off Delay Time

28.3 ns

Input Capacitance Ciss Max Vds

3220pF @ 25V

Gate Charge Qg Max Vgs

51nC @ 10V

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Yayın Yılı

2008

Terminal Sayısı

2

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

228A

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

83W Tc

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G2

Drive Voltage Max Rds On Min Rds On

5V 10V

Vgsth Max Id

3.5V @ 250μA