NTD4909NT4G

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Pin Sayısı

4

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Sayısı

4

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

8m Ω @ 30A, 10V

Power Dissipation

1.37W

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

40

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

17.5nC @ 10V

Turn On Delay Time

11 ns

Fabrika Tedarik Süresi

5 Weeks

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Vgsth Max Id

2.2V @ 250μA

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

Continuous Drain Current Id

12.1A

Drain Currentmax Abs Id

8.8A

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Input Capacitance Ciss Max Vds

1314pF @ 15V

Turn Off Delay Time

21 ns

JESD-609 Kodu

e3

Case Connection

DRAIN

Fet Type

N-Channel

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Yayın Yılı

2007

Avalanche Energy Rating Eas

28 mJ

Genişlik

6.22mm