Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2007
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Fabrika Tedarik Süresi
- 4 Weeks
- Radyasyon Dayanımı
- No
- Ambalaj
- Tube
- Gate Charge Qg Max Vgs
- 19.2nC @ 4.5V
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rise Time
- 17.3ns
- Terminal Kaplaması
- Tin (Sn)
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 11.2A Ta 73A Tc
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Yüzey Montaj
- NO
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Vgsth Max Id
- 2.5V @ 250μA
- Power Dissipation Max
- 1.3W Ta 54.5W Tc
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 13.6A
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Fall Time Typ
- 2.8 ns
- Kılıf / Paket
- TO-251-3 Stub Leads, IPak
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz
- Lead Free
- JESD-609 Kodu
- e3
- Input Capacitance Ciss Max Vds
- 1563pF @ 12V
- Turn Off Delay Time
- 23.8 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 6.2m Ω @ 30A, 10V
- Drain To Source Breakdown Voltage
- 25V
- Fet Type
- N-Channel
- Power Dissipation
- 2W
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