NTD4815N-35G

Specifications

Genişlik

7.49mm

Ambalaj

Tube

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

87A

Avalanche Energy Rating Eas

60.5 mJ

Yayın Yılı

2008

Transistor Element Material

SILICON

Threshold Voltage

1.5V

Power Dissipation Max

1.26W Ta 32.6W Tc

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Yüzey Montaj

NO

RoHS Durumu

ROHS3 Compliant

Yükseklik

2.38mm

Current Continuous Drain Id25

6.9A Ta 35A Tc

Fall Time Typ

21.4 ns

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

35A

ECCN Kodu

EAR99

Drain Currentmax Abs Id

6.9A

Fet Type

N-Channel

Akım Değeri

35A

Case Connection

DRAIN

Terminal

Through Hole

Turn Off Delay Time

11.4 ns

Input Capacitance Ciss Max Vds

770pF @ 12V

JESD-609 Kodu

e3

Nominal Vgs

2.5 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Turn On Delay Time

10.5 ns

Fabrika Tedarik Süresi

2 Weeks

Montaj Tipi

Through Hole

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

14.1nC @ 11.5V

Terminal Sayısı

3

Number Of Elements

1

Element Configuration

Single