NTD4809NT4G

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Pin Sayısı

4

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Pin Sayısı

4

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

9m Ω @ 30A, 10V

Power Dissipation

2W

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

40

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Contact Plating

Tin

Gate Charge Qg Max Vgs

25nC @ 11.5V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

4 Weeks

Turn On Delay Time

12.3 ns

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Rise Time

22.7ns

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Uzunluk

6.73mm

Vgsth Max Id

2.5V @ 250μA

ECCN Kodu

EAR99

Continuous Drain Current Id

58A

Drain Currentmax Abs Id

9A

Gate To Source Voltage Vgs

20V

Fall Time Typ

2.8 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

JESD-609 Kodu

e3

Turn Off Delay Time

25.3 ns

Input Capacitance Ciss Max Vds

1456pF @ 12V

Case Connection

DRAIN

Fet Type

N-Channel

Transistor Element Material

SILICON

Yayın Yılı

2007

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE