NTD4808N-1G

Specifications

Jesd30 Code

R-PSIP-T3

Power Dissipation Max

1.4W Ta 54.6W Tc

Vgsth Max Id

2.5V @ 250μA

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Yüzey Montaj

NO

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

10A Ta 63A Tc

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

102ns

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

13nC @ 4.5V

Ambalaj

Tube

Fabrika Tedarik Süresi

2 Weeks

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2008

Terminal Sayısı

3

Vgs Max

±20V

Case Connection

DRAIN

Power Dissipation

2W

Fet Type

N-Channel

Rds On Max Id Vgs

8m Ω @ 30A, 10V

Drain To Source Breakdown Voltage

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Turn Off Delay Time

11 ns

Input Capacitance Ciss Max Vds

1538pF @ 12V

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Pin Sayısı

4

Fall Time Typ

5.6 ns

Pin Sayısı

4