NTD23N03RG

Specifications

Drainsource On Resistancemax

0.06Ohm

Drain To Source Breakdown Voltage

25V

Rise Time

14.9ns

RoHS Durumu

RoHS Compliant

Input Capacitance Ciss Max Vds

225pF @ 20V

Power Dissipation

1.64W

Continuous Drain Current Id

17.1A

Jesd30 Code

R-PSSO-G2

Gate Charge Qg Max Vgs

3.76nC @ 4.5V

Drive Voltage Max Rds On Min Rds On

4V 5V

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgsth Max Id

2V @ 250μA

Terminal Formu

GULL WING

Turn Off Delay Time

9.9 ns

Drain Currentmax Abs Id

3.8A

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Voltage Rated Dc

25V

Fet Type

N-Channel

Number Of Elements

1

Pin Sayısı

3

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

2

Fall Time Typ

2 ns

Akım Değeri

23A

JESD-609 Kodu

e3

Parça Durumu

Obsolete

Transistor Application

SWITCHING

Rds On Max Id Vgs

45m Ω @ 6A, 10V

Vgs Max

±20V

Pulsed Drain Currentmax Idm

40A

Element Configuration

Single

Current Continuous Drain Id25

3.8A Ta 17.1A Tc

Qualification Status

Not Qualified