NTB75N06T4G

Specifications

Akım Değeri

75A

Vgs Max

±20V

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Power Dissipation

214W

Vgsth Max Id

4V @ 250μA

Drain To Source Breakdown Voltage

60V

Yayın Yılı

2011

RoHS Durumu

RoHS Compliant

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

130nC @ 10V

Continuous Drain Current Id

75A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance Ciss Max Vds

4510pF @ 25V

Current Continuous Drain Id25

75A Ta

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

844 mJ

Turn Off Delay Time

90 ns

Pin Sayısı

3

Drainsource On Resistancemax

0.0095Ohm

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

LAST SHIPMENTS (Last Updated: 21 hours ago)

Montaj

Surface Mount

Power Dissipation Max

2.4W Ta 214W Tj

Kurşunsuz

Lead Free

Fet Type

N-Channel

Rise Time

112ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Element Configuration

Single

ECCN Kodu

EAR99

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ