NTB6412ANT4G

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Uzunluk

10.29mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Power Dissipation Max

167W Tc

Fet Type

N-Channel

Rise Time

140ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Obsolete

Genişlik

9.65mm

Element Configuration

Single

ECCN Kodu

EAR99

Turn On Delay Time

16 ns

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

18.2m Ω @ 58A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Formu

GULL WING

Pin Sayısı

3

Fall Time Typ

126 ns

Pulsed Drain Currentmax Idm

240A

Vgs Max

±20V

Drain To Source Voltage Vdss

100V

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Power Dissipation

167W

Yayın Yılı

2009

Vgsth Max Id

4V @ 250μA

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Gate Charge Qg Max Vgs

100nC @ 10V

Continuous Drain Current Id

58A

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB