NTB45N06LT4G

Specifications

Fabrika Tedarik Süresi

2 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Genişlik

9.65mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Drive Voltage Max Rds On Min Rds On

5V

Fet Type

N-Channel

Rise Time

341ns

Kurşunsuz

Lead Free

Yükseklik

4.83mm

Uzunluk

10.29mm

Power Dissipation Max

2.4W Ta 125W Tj

Rds On Max Id Vgs

28m Ω @ 22.5A, 5V

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Fall Time Typ

158 ns

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Direnç

26MOhm

Turn On Delay Time

13 ns

Case Connection

DRAIN

Transistor Application

SWITCHING

Voltage Rated Dc

60V

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id

45A

Additional Feature

LOGIC LEVEL COMPATIBLE

Gate Charge Qg Max Vgs

32nC @ 5V

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Vgs Max

±15V

Akım Değeri

45A

Yayın Yılı

2005

Drain To Source Breakdown Voltage

60V