NTB18N06T4G

Specifications

Tepe Reflow Süresi (maks. sn)

40

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

260

Yayın Yılı

2005

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Montaj Tipi

Surface Mount

Vgs Max

±20V

Number Of Elements

1

ECCN Kodu

EAR99

Fet Type

N-Channel

Continuous Drain Current Id

15A

Power Dissipation Max

48.4W Tc

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Sayısı

3

Case Connection

DRAIN

Avalanche Energy Rating Eas

61 mJ

Voltage Rated Dc

60V

Rise Time

25ns

Drainsource On Resistancemax

0.09Ohm

Input Capacitance Ciss Max Vds

450pF @ 25V

Element Configuration

Single

Gate Charge Qg Max Vgs

22nC @ 10V

Pulsed Drain Currentmax Idm

45A

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

90m Ω @ 7.5A, 10V

JESD-609 Kodu

e3

Power Dissipation

48.4W

Akım Değeri

15A