Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gain Bandwidth Product
- 100MHz
- Fabrika Tedarik Süresi
- 5 Weeks
- Hfemin
- 100
- Transistor Type
- NPN
- Emitter Base Voltage Vebo
- 5V
- Radyasyon Dayanımı
- No
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2009
- Terminal Formu
- GULL WING
- Collector Emitter Voltage Vceo
- 45V
- Weight
- 1.437803g
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Transition Frequency
- 100MHz
- Terminal Pozisyonu
- DUAL
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- 700mV
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Number Of Elements
- 1
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Terminal Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Polaritychannel Type
- NPN
- Max Collector Current
- 500mA
- Current Collector Cutoff Max
- 100nA ICBO
- Montaj
- Surface Mount
- JESD-609 Kodu
- e3
- Collector Base Voltage Vcbo
- 50V
- Currentcollector Ic Max
- 500mA
- Reference Standard
- AEC-Q101
- Kurşunsuz Kodu
- yes
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA 1V
- Power Max
- 225mW
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Max Power Dissipation
- 300mW
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