Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Power Max
- 270mW
- Yayın Yılı
- 2013
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 6
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 10mA 1V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Max Collector Current
- 500mA
- Max Power Dissipation
- 270mW
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- DUAL
- Terminal Kaplaması
- Tin (Sn)
- Kurşunsuz Kodu
- yes
- Transistor Type
- PNP
- RoHS Durumu
- ROHS3 Compliant
- Yüzey Montaj
- YES
- Montaj Tipi
- Surface Mount
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 6
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 7 Weeks
- Current Collector Cutoff Max
- 100nA
- Transition Frequency
- 150MHz
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Hfemin
- 120
- Kılıf / Paket
- SC-74, SOT-457
- Lifecycle Status
- ACTIVE (Last Updated: 18 hours ago)
- Frequency Transition
- 150MHz
- JESD-609 Kodu
- e3
- Emitter Base Voltage Vebo
- -4V
- Collectoremitter Breakdown Voltage
- 80V
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 250mV
- Polaritychannel Type
- PNP
- Terminal Formu
- GULL WING
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