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NJVMJD112G

ON Semiconductor

NJVMJD112G

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Ambalaj
Tube
Collector Base Voltage Vcbo
100V
Kurşunsuz
Lead Free
Max Power Dissipation
1.75W
Element Configuration
Single
Max Collector Current
2A
Kurşunsuz Kodu
yes
Transition Frequency
25MHz
Terminal Kaplaması
Tin (Sn)
ECCN Kodu
EAR99
Collector Emitter Voltage Vceo
3V
Yayın Yılı
2013
Pin Sayısı
3
Polaritychannel Type
NPN
JESD-609 Kodu
e3
Frequency Transition
25MHz
Current Collector Cutoff Max
20μA
Power Max
1.75W
Çalışma Sıcaklığı
-65°C~150°C TJ
Fabrika Tedarik Süresi
8 Weeks
Transistor Type
NPN - Darlington
Collectoremitter Breakdown Voltage
100V
Radyasyon Dayanımı
No
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Montaj
Surface Mount
Vce Saturation Max Ib Ic
3V @ 40mA, 4A
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
RoHS Durumu
ROHS3 Compliant
Dc Current Gain Hfe Min Ic Vce
1000 @ 2A 3V
Montaj Tipi
Surface Mount

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