Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- NPN
- Qualification Status
- Not Qualified
- Pin Sayısı
- 5
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 200W
- Transistor Element Material
- SILICON
- Max Collector Current
- 16A
- Collectoremitter Breakdown Voltage
- 250V
- Yayın Yılı
- 2006
- Montaj
- Through Hole
- Kılıf / Paket
- TO-264-5
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 5
- JESD-609 Kodu
- e3
- Transition Frequency
- 4MHz
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Parça Durumu
- Obsolete
- Montaj Tipi
- Through Hole
- Dc Current Gain Hfe Min Ic Vce
- 25 @ 8A 5V
- Akım Değeri
- 16A
- Collector Emitter Voltage Vceo
- 4V
- Voltage Rated Dc
- 250V
- Terminal Pozisyonu
- SINGLE
- Vce Saturation Max Ib Ic
- 4V @ 3.2A, 16A
- Frequency Transition
- 4MHz
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Kurşunsuz Kodu
- yes
- Transistor Application
- AMPLIFIER
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- RoHS Durumu
- RoHS Compliant
- Polaritychannel Type
- NPN
- Ambalaj
- Tube
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 5
- Current Collector Cutoff Max
- 100μA
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