NDF10N62ZG

Specifications

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Vgs Max

±30V

Uzunluk

10.63mm

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

3

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Genişlik

4.9mm

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

1425pF @ 25V

Yükseklik

16.12mm

Vgsth Max Id

4.5V @ 100μA

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Parça Durumu

Obsolete

Turn On Delay Time

15 ns

Power Dissipation Max

36W Tc

Number Of Elements

1

Pin Sayısı

3

Current Continuous Drain Id25

10A Tc

Rise Time

31ns

Gate Charge Qg Max Vgs

47nC @ 10V

Fall Time Typ

21 ns

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Ambalaj

Tube

Montaj Tipi

Through Hole

Yayın Yılı

2005

Direnç

750MOhm

Turn Off Delay Time

40 ns

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 day ago)

RoHS Durumu

RoHS Compliant

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Rds On Max Id Vgs

750m Ω @ 5A, 10V

Jedec95 Code

TO-220AB

Drain To Source Breakdown Voltage

620V