NDF10N60ZH

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

23 ns

Turn On Delay Time

15 ns

Parça Durumu

Obsolete

Rise Time

31ns

Fabrika Tedarik Süresi

15 Weeks

Current Continuous Drain Id25

10A Tc

Pulsed Drain Currentmax Idm

40A

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

39W

Continuous Drain Current Id

10A

Drain To Source Breakdown Voltage

600V

JESD-609 Kodu

e3

Rds On Max Id Vgs

750m Ω @ 5A, 10V

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Drain Currentmax Abs Id

6A

Yayın Yılı

2012

Ambalaj

Tube

Drainsource On Resistancemax

0.75Ohm

RoHS Durumu

RoHS Compliant

Element Configuration

Single

Power Dissipation Max

39W Tc

Gate Charge Qg Max Vgs

68nC @ 10V

Number Of Elements

1

Pin Sayısı

3

Vgsth Max Id

4.5V @ 100μA

Yüzey Montaj

NO

Uzunluk

10.63mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

1645pF @ 25V

Yükseklik

16.12mm

Kurşunsuz

Lead Free