NDD04N60Z-1G

Specifications

Current Continuous Drain Id25

4.1A Tc

Rise Time

9ns

Fabrika Tedarik Süresi

19 Weeks

Jesd30 Code

R-PSIP-T3

Turn On Delay Time

13 ns

Parça Durumu

Obsolete

Fall Time Typ

15 ns

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Contact Plating

Tin

Fet Type

N-Channel

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Pulsed Drain Currentmax Idm

20A

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

600V

Continuous Drain Current Id

4.1A

Power Dissipation

83W

RoHS Durumu

RoHS Compliant

Ambalaj

Tube

Montaj Tipi

Through Hole

Drain Currentmax Abs Id

2.6A

Yayın Yılı

2010

ECCN Kodu

EAR99

Rds On Max Id Vgs

2 Ω @ 2A, 10V

Number Of Elements

1

Pin Sayısı

4

Gate Charge Qg Max Vgs

29nC @ 10V

Power Dissipation Max

83W Tc

Element Configuration

Single

Kurşunsuz

Lead Free

Genişlik

2.38mm

Input Capacitance Ciss Max Vds

640pF @ 25V

Yükseklik

6.35mm

Uzunluk

6.73mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Terminal Sayısı

3

Yüzey Montaj

NO